Laser-assisted chemical vapour deposition of TiSi2: aspects of deposition and etching

Lines of TiSi, were written on Si(100) substrates by using a focused Ar+-laser. The reaction gas mixture consisted of TiCl, and H, and the substrate was used a s the silicon source. The laser deposited TiSi, lines were examined as a function of the deposition parameters. Especially the initial reactions have been studied b varying the the writing speed in a wide range. The C-54 phase of TiSi, was observedr In all experiments. The geometrical shape and the surface profile of the deposited TiSi, were complicated functions of the process parameters and the growth process itself. Substrate reactions increased the substrate etching initially. After a sufficiently thick layer of TiSi, had been grown, thus protecting the substrate from the reaction gas mixture, the etch process stopped. By minimizing the initial substrate reactions, flat lines with respect to the substrate surface could be grown.